Modelling temperature effects of quarter micrometre MOSFETs in BSIM3v3 for circuit simulation

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Published under licence by IOP Publishing Ltd
, , Citation Yuhua Cheng et al 1997 Semicond. Sci. Technol. 12 1349 DOI 10.1088/0268-1242/12/11/004

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Author affiliations

1 Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, CA 94720, USA

2 ULSI Device Development Laboratories, NEC Corp., Sagamihara, Kanagawa 229, Japan

3 Cadence Design System, River Oaks Parkway, San Jose, CA 95134, USA

4 BTA Technology Inc., Old Ironsides Drive, Santa Clara, CA 95054, USA

Dates

  1. Received 18 February 1997
  2. Accepted 14 July 1997

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0268-1242/12/11/1349

Abstract

This paper presents the temperature modelling in BSIM3v3 (Berkeley Short-channel IGFET Model version 3), and comparison with measured data for both n- and p-channel devices with a channel length down to a quarter of a micrometre from room temperature up to C. I - V, and are modelled with the temperature dependences of mobility, threshold voltage, saturation velocity and series resistance.

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10.1088/0268-1242/12/11/004