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High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5 -

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Published under licence by IOP Publishing Ltd
, , Citation B Lambert et al 1998 Semicond. Sci. Technol. 13 143 DOI 10.1088/0268-1242/13/1/001

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1 Laboratoire de Physique des Solides, I.N.S.A. Rennes, 20 Avenue des Buttes de Coësmes, 35043 Rennes Cedex, France

2 France Telecom, C.N.E.T., DTD/PCO, 2 Avenue Pierre Marzin, 22301 Lannion Cedex, France

Dates

  1. Received 3 September 1997
  2. Accepted 7 November 1997

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0268-1242/13/1/143

Abstract

Self-assembled InAs quantum dots emitting at 1.5 - with high efficiency have been grown by GSMBE on InP. One of the most important properties of quantum dots is the conservation of high radiative recombination efficiency at room temperature as opposed to the case of quantum wells. This property has been evidenced on carefully grown quantum dots by photoluminescence measurements between 2 K and 300 K.

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10.1088/0268-1242/13/1/001