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Quantum dot laser

Published 15 November 2010 2011 IOP Publishing Ltd
, , Citation N N Ledentsov 2011 Semicond. Sci. Technol. 26 014001 DOI 10.1088/0268-1242/26/1/014001

0268-1242/26/1/014001

Abstract

Discovery of self-organized epitaxial quantum dots (QDs) resulted in multiple breakthroughs in the field of physics of zero-dimensional heterostructures and allowed the advancement of optoelectronic devices, most remarkably, lasers. The most advanced and well-understood results are obtained for lasers based on Stranski–Krastanow InGaAs–GaAs three-dimensional QDs; even significant progress in the understanding of basic lasing properties is also achieved for QDs made of II–VI materials and 'native' QDs formed by nanoscale alloy phase separation in the InGaN–AlGaN material system.

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