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Inter-sub-band absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperature

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, , Citation P von Allmen et al 1988 Semicond. Sci. Technol. 3 1211 DOI 10.1088/0268-1242/3/12/010

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1 Inst. de Micro- et Optoelectronique, Ecole Polytech. Federale de Lausanne, Switzerland

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0268-1242/3/12/1211

Abstract

The 0 to 1 inter-sub-band electronic transition is studied in (100) GaAs/Al0.35Ga0.65As multi-quantum well structures as a function of temperature between 4.2 K and room temperature. Samples doped in the barrier or in the well are compared. A lineshape calculation allows the authors to separate the broadening of a single energy state from the intrinsic broadening caused by the different sub-band dispersions. Qualitatively different behaviour is found for modulation doped and well doped samples.

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10.1088/0268-1242/3/12/010