Abstract
The authors have grown (Al,Ga)As/GaAs two-dimensional electron gas (2DEG) structures with lightly doped regions of (Al,Ga)As and superlattices in the undoped GaAs. Using this technique, they have obtained ultralow density (2*1010 cm-2), high-mobility samples where phonon scattering at 4 K is the dominant factor in limiting the mobility; reducing the measurement temperature to below 1.5 K gives mobilities of up to 107 cm2 V-1 s-1.
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