The determination of valence band discontinuities and interface charge densities in Si/Si1-yGey/Si heterojunctions

J C Brighten; I D Hawkins; A R Peaker; R A Kubiak; E H C Parker; T E Whall

doi:10.1088/0268-1242/8/7/048

Semiconductor Science and Technology

The determination of valence band discontinuities and interface charge densities in Si/Si_1-yGe_y/Si heterojunctions

J C Brighten¹, I D Hawkins¹, A R Peaker¹, R A Kubiak¹, E H C Parker¹ and T E Whall¹

Published under licence by IOP Publishing Ltd
Semiconductor Science and Technology, Volume 8, Number 7 Citation J C Brighten et al 1993 Semicond. Sci. Technol. 8 1487 DOI 10.1088/0268-1242/8/7/048

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¹ Dept. of Phys., Warwick Univ., Coventry, UK

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Abstract

The valence band offsets in Si/Si_1-yGe_y/Si strained-layer heterostructures with 0<y<0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.

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