Abstract
Electronic properties of a highly doped Kondo system are discussed. The method of expressing the s-d exchange interaction in terms of the two kinds of quasi-spins, proposed by one of the authors (Kurata (1970)) for the single-impurity Kondo problem, is extended to this system. A generalised Hartree-Fock approximation is made for the interaction and the coherent potential approximation for configurational average over the sites of randomly distributed impurity spins. The density of states of conduction electrons and electrical resistivity are calculated for various concentrations of impurity spins. A reduction of the density of states due to the Kondo effect is found at the Fermi level.