Abstract
Frequency multipliers based on the single-barrier and double-barrier InN/GaN heterostructure varactor diodes are suggested. The DC and large-signal AC vertical electron transport in the InN/GaN diodes are investigated by ensemble Monte Carlo simulations. It is found that InN/GaN heterostructure-barrier varactor diodes are able to operate as efficient frequency multipliers in the frequency range up to 1 THz.
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