Triple-gate metal–oxide–semiconductor field effect transistors fabricated with interference lithography

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Published 9 February 2004 IOP Publishing Ltd
, , Citation M C Lemme et al 2004 Nanotechnology 15 S208 DOI 10.1088/0957-4484/15/4/016

0957-4484/15/4/S208

Abstract

In this work, n-type triple-gate metal–oxide–semiconductor field effect transistors (MOSFETs) are presented, where laser interference lithography (LIL) is integrated into a silicon-on-insulator (SOI) CMOS process to provide for the critical definition of the transistor channels. A mix and match process of optical contact lithography and LIL is developed to achieve device relevant structures. The triple-gate MOSFETs are electrically characterized to demonstrate the feasibility of this low cost fabrication process.

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10.1088/0957-4484/15/4/016