SEMICONDUCTOR PHYSICS

Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells

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2011 Chinese Institute of Electronics
, , Citation Zhu Jun et al 2011 J. Semicond. 32 112002 DOI 10.1088/1674-4926/32/11/112002

1674-4926/32/11/112002

Abstract

The properties of polarons in zinc-blende and wurtzite GaN/AlN quantum wells with Fröhlich interaction Hamiltonians are compared in detail. The energy shifts of polarons at ground state due to the interface (IF), confined (CO) and half-space phonon modes are calculated by a finite-difference computation combined with a modified LLP variational method. It is found that the two Fröhlich interaction Hamiltonians are consistent with each other when the anisotropic effect from the z-direction and the x-y plane is neglected. The influence of the anisotropy on the polaron energy shifts due to the IF phonon modes for a smaller well width or due to the CO phonon modes for a moderate well width is obvious. In addition, the built-in electric field has a remarkable effect on the polaron energy shifts contributed by the various phonon modes.

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10.1088/1674-4926/32/11/112002