Abstract
We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate (GS DG) MOSFET device. Our analysis is carried out by using an accurate continuous current—voltage (I—V) model, derived based on both Poisson's and continuity equations without the need of charge-sheet approximation. The developed model offers the possibility to describe the entire range of different regions (subthreshold, linear and saturation) through a unique continuous expression. Therefore, the proposed approach can bring considerable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.