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Semiconductor Integrated Circuits

IC design of low power, wide tuning range VCO in 90 nm CMOS technology

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2014 Chinese Institute of Electronics
, , Citation Li Zhu et al 2014 J. Semicond. 35 125013 DOI 10.1088/1674-4926/35/12/125013

1674-4926/35/12/125013

Abstract

A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET (IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range (FTR) of 18.4% and a phase noise of −101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of −185 dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 mA DC current.

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10.1088/1674-4926/35/12/125013