Abstract
In the present work we study thin films of copper oxide that were deposited by oxidation of copper thin films on silicon substrates in temperatures varying from 150 °C up to 450 °C. Copper films were deposited by vacuum evaporation and their thickness was estimated from the evaporated mass. X-rays diffraction (XRD) patterns showed that in the copper oxide films coexist two phases: CuO and Cu2O their proportion varying with oxidation temperature. At temperatures up to 225 °C Cu and Cu2O is formed while above this temperature CuO forms. Pure Cu2O was obtained at 225 °C while pure CuO above 350 °C. FTIR transmittance spectra confirmed the results from the XRD. The index of diffraction was calculated from spectroscopic ellipsometry measurements within the energy range 1 to 3 eV, which were analysed using the Forouhi-Bloomer model.
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