Mechanism of Processes Stimulated by Ultraviolet Radiation

Modern technologies for creating integrated circuit elements offer many innovations, both in terms of the technological cycle and the introduction of new technologies. Stimulated processes in this regard and their mechanism require a thorough study in order to further improve the technology and the parameters of the micro and nano devices made on their basis. We have studied the processes stimulated by ultraviolet radiation, such as Stimulated Plasma Anodizing and Stimulated Magnetron Sputtering. In the study of stimulated mechanism should be considered processes which are going on with ultraviolet irradiation on the sample and plasma. In these processes, the UV light effects on the plasma, on the surface of the synthesized material, its volume, and the interface area of the material. In particular, in the case of plasma anodizing, UV radiation: 1) produces ozone in the plasma that is much more active than oxygen ion. 2) Ionizes interface area of Plasma-oxide, producing additional current carriers, and 3) transferring electrons from the oxidized material bond zone to the anti-bond zone, thereby weakening the bond strength between the oxide atoms. Because of these effects, the process of mixing anions and cations is facilitated and, consequently, the oxygen diffusion coefficient is increased and the oxidation process is accelerated. At the oxide-semiconductor interface happens roasting existing charge trapping levels, which reduces the concentration of charge carriers and improves the oxide parameters. The same processes are observed in the case of Magnetron Sputtering. In the deposited layer excites mechanical tensions and it can be removed by UV irradiation in the same way as in the case of plasma anodizing.