Abstract
The electrical resistivity and Hall effect of zone-levelled single crystals of Bi-Sb alloys have been measured in the temperature range from 4.2°K to 300°K. vs curves suggest thermal activation of carriers in the concentration range from 5% to 40% Sb in the temperature range from 25°K to 100°K; approximate activation energies have been inferred from their slopes. The activation energy appears to have a maximum at a concentration near 12%. Some anomalies have been observed in the behavior of and on both sides of this concentration at low temperatures. Lattice parameters for these alloys have also been measured for the entire range of solid solubility. Both a maximum and minimum in the -axis lattice parameter vs concentration occur near the concentration at which anomalies appear in transport properties. These phenomena are discussed in terms of a simple band model proposed by Blount and Cohen.
- Received 22 January 1959
DOI:https://doi.org/10.1103/PhysRev.114.1518
©1959 American Physical Society