Abstract
The conductivity of an -type semiconductor has been calculated in the region of low-temperature and low impurity concentration . The model is that of phonon-induced electron hopping from donor site to donor site where a fraction of the sites is vacant due to compensation. To first order in the electric field, the solution to the steady-state and current equations is shown to be equivalent to the solution of a linear resistance network. The network resistance is evaluated and the result shows that the dependence of the resistivity is . For small , , where is the dielectric constant. At higher , and attain a minimum near . The dependence on is extracted; the agreement of the latter and of with experiment is satisfactory. The magnitude of is in fair agreement with experiment. The influence of excited donor states on is discussed.
- Received 23 June 1960
DOI:https://doi.org/10.1103/PhysRev.120.745
©1960 American Physical Society