Diffusion and Drift of Minority Carriers in Semiconductors for Comparable Capture and Scattering Mean Free Paths

W. Shockley
Phys. Rev. 125, 1570 – Published 1 March 1962
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Abstract

A method of treating transport of injected minority carriers is developed applicable to cases in which the physical dimension and the mean free path for capture may be less than the mean free path for scattering. The basic differential equations of scattering and capture are those of the conservation of flux method of McKelvey, Longini, and Brody, and the results agree with theirs, the new feature being a demonstration that the basic equations are equivalent to a continuity equation of the conventional form but with a diffusion constant reduced by including the effect of capture in shortening the mean free path. This method of treatment reduces the problems to a familiar form when suitable boundary conditions are introduced. The basic differential equations of scattering and capture are shown to correspond to certain simplifying and restricting assumptions about the carrier velocity distributions. The treatment is extended from the case of one dimension with zero electric field to three dimensions with electric fields.

  • Received 13 October 1961

DOI:https://doi.org/10.1103/PhysRev.125.1570

©1962 American Physical Society

Authors & Affiliations

W. Shockley

  • Shockley Transistor, Unit of Clevite Transistor, Palo Alto, California

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Issue

Vol. 125, Iss. 5 — March 1962

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