Intervalley-Scattering Selection Rules in III-V Semiconductors

Joseph L. Birman, Melvin Lax, and Rodney Loudon
Phys. Rev. 145, 620 – Published 13 May 1966
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Abstract

Selection rules are presented for intervalley scattering between the lowest conduction-band minima at Γ, X, and L in the Brillouin zone of a III-V semiconductor. These selection rules are required for theories of the Gunn effect. The two most important crystals experimentally are GaAs, where longitudinal optic phonons cause the intervalley scattering, and InP, where longitudinal acoustic phonons produce the scattering.

  • Received 6 October 1965

DOI:https://doi.org/10.1103/PhysRev.145.620

©1966 American Physical Society

Authors & Affiliations

Joseph L. Birman*

  • New York University, University Heights, New York, New York

Melvin Lax

  • Bell Telephone Laboratories, Murray Hill, New Jersey

Rodney Loudon

  • Royal Radar Establishment, Malvern, England

  • *Partially supported by the U. S. Army Research Office (Durham) and the Aerospace Research Laboratories, Office of Aerospace Research, Wright-Patterson Air Force Base, Ohio.
  • Present address: Bell Telephone Laboratories, Murray Hill, New Jersey.

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Vol. 145, Iss. 2 — May 1966

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