Energy-Band Structure and Electronic Properties of SnTe

Sohrab Rabii
Phys. Rev. 182, 821 – Published 15 June 1969
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Abstract

The energy-band structure of SnTe is calculated using the augmented-plane-wave method, taking into account the relativistic corrections. The resulting wave functions at L are used to calculate momentum matrix elements. These matrix elements are then used in a k·p perturbation calculation in the presence of a magnetic field to obtain band parameters at point L in the Brillouin zone. Nonparabolic expansions for the conduction and valence bands at L are obtained using Cohen's model. The effect of strain on the energy levels at L is calculated using the deformation-potential theory. The results indicate a complicated shape for the valence band at L, with two maxima at each side of L on the face of the Brillouin zone. A record set of apparent maxima is found in the Σ direction at k=(πa)(45,45,0). This is consistent with the "two-valence-band" model suggested to explain the experimental results. We are investigating the possibility that these extrema may be saddle points. The conduction- and valence-band-edge symmetries at L are opposite to those of the lead chalcogenides, as are the band-gap deformation potentials at this point (-8.68 eV for SnTe and 11.55-17.24 eV for the others). This is in agreement with the experimentally proposed "band-inversion" model.

  • Received 23 December 1968

DOI:https://doi.org/10.1103/PhysRev.182.821

©1969 American Physical Society

Authors & Affiliations

Sohrab Rabii

  • Monsanto Company, St. Louis, Missouri 63166

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Vol. 182, Iss. 3 — June 1969

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