Abstract
The drift mobility of holes in -type germanium and electrons in -type germanium has been measured as functions of impurity concentration and temperature. In single crystals of resistivity greater than 10 ohm-centimeter, the mobility at 300°K of holes is /volt-sec and of electrons is /volt-sec. For this high resistivity material, the temperature dependence of mobility in the same units is and , in agreement with conductivity-mobility measurements.
- Received 24 July 1953
DOI:https://doi.org/10.1103/PhysRev.92.681
©1953 American Physical Society