Dielectronic recombination and energy loss for He-like <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><mmultiscripts><mrow><mi mathvariant="normal">Br</mi></mrow><mprescripts></mprescripts><mrow></mrow><mrow><mn>79</mn></mrow><mrow></mrow><mrow></mrow></mmultiscripts></mrow></math></span> ions channeled in a thin single crystal of Si

J. U. Andersen; J. Chevallier; G. C. Ball; W. G. Davies; J. S. Forster; J. S. Geiger; J. A. Davies; H. Geissel; E. P. Kanter

doi:10.1103/PhysRevA.54.624

Dielectronic recombination and energy loss for He-like ${}^{79}{Br}$ ions channeled in a thin single crystal of Si

J. U. Andersen, J. Chevallier, G. C. Ball, W. G. Davies, J. S. Forster, J. S. Geiger, J. A. Davies, H. Geissel, and E. P. Kanter

Phys. Rev. A 54, 624 – Published 1 July 1996

Abstract

Dielectronic recombination of He-like ${}^{79}{Br}$ ions channeled along the 〈110〉 axis of a thin Si crystal has been studied by the measurement of the charge-state distribution and x-ray production. The results of the charge-state measurements confirm that the probability of resonance capture is proportional to the valence electron density sampled by the ion. The energy-loss distributions of channeled ions are also in good agreement with theoretical estimates. © 1996 The American Physical Society.