Self-Powered Solar-Blind Photodetectors Based on α/β Phase Junction of Ga2O3

D.Y. Guo, K. Chen, S.L. Wang, F.M. Wu, A.P. Liu, C.R. Li, P.G. Li, C.K. Tan, and W.H. Tang
Phys. Rev. Applied 13, 024051 – Published 20 February 2020
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Abstract

Self-powered Ga2O3-based solar-blind photodetectors have received attention recently due to the increased demand for energy saving, miniaturization, and high efficiency in devices. An ideal device structure consisting of a Ga2O3-based p-n junction is still difficult to obtain, since p-type doping is a major challenge. Although self-powered devices based on heterojunction are promising, there are two fatal disadvantages: (1) photosensitivity of the non-solar-blind region, on account of the narrower band gap of the heterojunction materials; and (2) poor quality of the epitaxial film due to lattice mismatch. In view of the various polymorphs of Ga2O3, we propose constructing a structure consisting of a Ga2O3 phase junction with α and β phases (α/β phase junction) for self-powered solar-blind photodetectors. The small lattice mismatch and similar band gap between α- and β-Ga2O3 will solve the two problems outlined above. The formation of α- and β-Ga2O3 is expected to result in a type-II band alignment, promoting separation of photogenerated carriers, which transfer through the junction to the corresponding electrodes. Herein, the α/β phase junction of Ga2O3 vertically aligned nanorod arrays with a thickness-controllable β-Ga2O3 shell layer are fabricated by a low-cost and simple process of hydrothermal and postannealing treatment. Two different types of self-powered α/β-Ga2O3 phase junction-based photodetectors, in the form of solid-state type and photoelectrochemical type, are constructed and realized. Our analysis shows that the constructed photodetectors are capable of highly efficient detection of solar-blind signal without any bias voltage. This work demonstrates the usefulness of using the α/β-Ga2O3 phase junction in a self-powered solar-blind photodetector, which is not only energy efficient, but also potentially workable in outer space, at the south and north pole, and other harsh environments without external power for a long time.

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  • Received 28 August 2019
  • Revised 27 December 2019
  • Accepted 4 February 2020

DOI:https://doi.org/10.1103/PhysRevApplied.13.024051

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & OpticalCondensed Matter, Materials & Applied Physics

Authors & Affiliations

D.Y. Guo1,2,*, K. Chen1, S.L. Wang1, F.M. Wu1,†, A.P. Liu1, C.R. Li1, P.G. Li3, C.K. Tan4, and W.H. Tang3,‡

  • 1Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
  • 2State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China
  • 3Information Functional Materials and Devices & State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • 4Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New York 13699, USA

  • *dyguo@zstu.edu.cn
  • fmw@zstu.edu.cn
  • whtang@bupt.edu.cn

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Issue

Vol. 13, Iss. 2 — February 2020

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