Band Structure and High-Field Transport Properties of InP

L. W. James, J. P. Van Dyke, F. Herman, and D. M. Chang
Phys. Rev. B 1, 3998 – Published 15 May 1970
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Abstract

Using the technique of energy-distribution analysis of photoemitted electrons, we have accurately located the position of several band-structure features of InP, including the next higher conduction-band minimum above the Γ1 minimum at 1.95 eV above the valence-band maximum, independent of temperature. This minimum is tentatively associated with the L1 symmetry point. High-temperature Hall-effect measurements confirm that there are no minima between the lowest two observed by photoemission. A band structure for InP has been computed using these new data in an empirically adjusted first-principles orthogonalized-plane-wave (OPW) calculation. The velocity-field characteristic has been calculated for a range of lattice temperatures. A negative differential mobility is predicted, with a room-temperature threshold field of 11 500 V/cm and a peak drift velocity of 3×107 cm/sec.

  • Received 3 December 1969

DOI:https://doi.org/10.1103/PhysRevB.1.3998

©1970 American Physical Society

Authors & Affiliations

L. W. James

  • Varian Associates, Central Research Laboratories, Palo Alto, California 94303

J. P. Van Dyke* and F. Herman

  • IBM Research Laboratory, San Jose, California 95114

D. M. Chang

  • Hewlett-Packard Laboratory, Palo Alto, California 94303

  • *Present address: Sandia Laboratories, Albuquerque, N. M.

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Vol. 1, Iss. 10 — 15 May 1970

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