The conduction-band and valence-band edges in InSb-As, In-GaAs, and In-GaSb with spin-orbit splitting removed are calculated as a function of concentration. A two-band Kane model modified by a diagonal self-energy describing the intraband alloy scattering is used. Random strains decrease the band gap and increase the Kane formula mass. Experimental agreement is good. The spin-orbit splitting at $\Gamma$ predicted for InSb-As disagrees with experiment. A proper treatment of alloy scattering does not appreciably alter the determination of the effective mass from transport measurements.

• Received 8 July 1974

DOI:https://doi.org/10.1103/PhysRevB.10.5147