Elevating the magnetic exchange coupling in the compressed antiferromagnetic axion insulator candidate $\mathrm{Eu}{\mathrm{In}}_{2}{\mathrm{As}}_{2}$

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Elevating the magnetic exchange coupling in the compressed antiferromagnetic axion insulator candidate $Eu {In}_{2} {As}_{2}$

F. H. Yu, H. M. Mu, W. Z. Zhuo, Z. Y. Wang, Z. F. Wang, J. J. Ying, and X. H. Chen

Phys. Rev. B 102, 180404(R) – Published 5 November 2020

Abstract

The magnetic topological materials have attracted much attention recently for their potential realization of various novel quantum states. However, the onset of magnetization in these materials usually occurs at low temperatures, impeding further applications. Here, by means of high pressure, we have significantly increased the magnetic transition temperature in an antiferromagnetic axion insulator candidate $Eu {In}_{2} {As}_{2}$ . Both crystal and magnetic structures remain the same with pressure up to 17 GPa. The Néel temperature can be monotonously increased from 16 K (ambient pressure) to 65 K (14.7 GPa). This is mainly attributed to the enhancement of intralayer ferromagnetic exchange coupling by pressure. With increasing pressure up to 17 GPa, a crystalline-to-amorphous phase transition occurs, which impedes further enhancement of the Néel temperature. Our results show that high pressure is an effective pathway to greatly enhance the magnetic transition temperature in topological materials. It is helpful for the realization of novel quantum states at elevated temperatures.

Received 2 August 2020
Accepted 26 October 2020

DOI:https://doi.org/10.1103/PhysRevB.102.180404

Physics Subject Headings (PhySH)

Pressure effects

Magnetic systems Topological materials

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

F. H. Yu¹, H. M. Mu¹, W. Z. Zhuo¹, Z. Y. Wang¹, Z. F. Wang¹, J. J. Ying ^1,*, and X. H. Chen^1,2,†

¹Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
²Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China

^*yingjj@ustc.edu.cn
^†chenxh@ustc.edu.cn

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Vol. 102, Iss. 18 — 1 November 2020

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Figure 1
(a) XRD pattern of $Eu {In}_{2} {As}_{2}$ single crystal with the corresponding Miller indices (00L) in parentheses. The inset represents an optical image of a typical $Eu {In}_{2} {As}_{2}$ single crystal. (b) Crystal structure of $Eu {In}_{2} {As}_{2}$ from different viewpoints (Eu, In, and As atoms are indicated as purple, yellow, and blue spheres, respectively). (c) Magnetic susceptibility as a function of temperature with applied field $H = 100 Oe$ along different crystal directions for $Eu {In}_{2} {As}_{2}$ single crystal under ambient pressure. (d) Magnetic hysteresis loops (MH) with field applied along different crystallographic orientations at 10 K. (e) In-plane resistivity as a function of temperature for $Eu {In}_{2} {As}_{2}$ single crystal under ambient pressure. (f) Magnetoresistance curves with magnetic field applied along different crystal directions at 10 K.
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Figure 2
(a) Temperature dependence of the in-plane electrical resistance ( $R_{x x}$ ) for $Eu {In}_{2} {As}_{2}$ under various pressures below 17 GPa. The Néel temperature gradually increases with increasing the pressure. (b) Temperature dependences of the in-plane electrical resistivity for $Eu {In}_{2} {As}_{2}$ after phase transition. (c) Resistivity as a function of pressure for $Eu {In}_{2} {As}_{2}$ at 2 K (red circle) and 300 K (black square).
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Figure 3
(a), (b) Magnetoresistance of $Eu {In}_{2} {As}_{2}$ single crystal measured at 10 K under various pressures. (c) $H_{c 1}$ and $H_{c 2}$ as a function of pressure. The gradual increments of $H_{c 2}$ at high pressure indicating the slight enhancement of interlayer antiferromagnetic exchange coupling.
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Figure 4
(a) XRD patterns of $Eu {In}_{2} {As}_{2}$ under high pressure up to 43.8 GPa with an incident wavelength $λ = 0.6199 Å$ . (b) Pressure dependence of the lattice parameters $a$ and $c$ for $Eu {In}_{2} {As}_{2}$ . (c) The derived cell volume as a function of pressure for $Eu {In}_{2} {As}_{2}$ . The black dotted line is a fitted curve by the Birch-Murnaghan equation of state with the derived bulk modulus $B_{0} = 32.3 GPa$ .
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Figure 5
(a) Pressure-temperature phase diagram of $Eu {In}_{2} {As}_{2}$ . The red circle and blue triangle represent the Néel temperature $T_{N}$ extracted from experimental and theoretical calculations, respectively. Above 17 GPa, the sample evolves into an amorphous phase. (b) Calculated exchange coupling parameters as a function of pressure. The intralayer coupling $J_{1}$ and $J_{2}$ gradually increases with increasing the pressure; however, the interlayer coupling $J_{3}$ remains the same under pressure. The inset is the definition of nearest-neighbor exchange coupling. (c) The Néel temperature as a function of the intralayer coupling $J_{1}$ .
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Physical Review B

covering condensed matter and materials physics

Elevating the magnetic exchange coupling in the compressed antiferromagnetic axion insulator candidate $Eu {In}_{2} {As}_{2}$

F. H. Yu, H. M. Mu, W. Z. Zhuo, Z. Y. Wang, Z. F. Wang, J. J. Ying, and X. H. Chen

Phys. Rev. B 102, 180404(R) – Published 5 November 2020

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Physical Review B

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Elevating the magnetic exchange coupling in the compressed antiferromagnetic axion insulator candidate EuIn2As2

F. H. Yu, H. M. Mu, W. Z. Zhuo, Z. Y. Wang, Z. F. Wang, J. J. Ying, and X. H. Chen

Phys. Rev. B 102, 180404(R) – Published 5 November 2020

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Elevating the magnetic exchange coupling in the compressed antiferromagnetic axion insulator candidate $Eu {In}_{2} {As}_{2}$