As electronic devices shrink down to their ultimate limit, the fundamental understanding of interfacial thermal transport becomes essential in thermal management. However, a comprehensive understanding of phonon transport mechanisms that drive interfacial thermal transport is still under development. The thermal transport across interfaces can be strongly affected by factors such as crystalline structure, surface roughness, chemical diffusion, etc. These complications lead to a significant quantitative uncertainty between experimentally measured thermal boundary conductance (TBC) across real material interfaces and theoretically calculated TBCs that are often predicted on structurally and/or chemically ideal interfaces. In this paper, we report on the thermal conductance across interfaces between various epitaxially grown metal films (Co, Ru, and Al) and $c$-plane sapphire substrates via time-domain thermoreflectance over the temperature range of ∼80 to ∼500 K. The room-temperature interface conductances of Al/sapphire, Co/sapphire, and Ru/sapphire are all $\sim 350\mathrm{MW}{\mathrm{m}}^{-1}{\mathrm{K}}^{-1}$ despite the phonon spectra differences among the metals. We compare our results to predictions of TBC using atomistic Green's function calculations and the modal nonequilibrium Landauer method with transmission from the diffuse mismatch model. We found a consistent quantitative agreement between the experimentally measured TBCs and the predictions using the modal nonequilibrium Landauer model for the $\mathrm{Al}/{\mathrm{Al}}_2{\mathrm{O}}_3$, $\mathrm{Co}/{\mathrm{Al}}_2{\mathrm{O}}_3$, and $\mathrm{Ru}/{\mathrm{Al}}_2{\mathrm{O}}_3$ interfaces. This result suggests that interfacial elastic phonon thermal transport dominates TBC for the various epitaxial metal/sapphire combinations of interest in this work, while other mechanisms are negligible.

• Received 19 July 2020
• Revised 30 September 2020
• Accepted 1 October 2020

DOI:https://doi.org/10.1103/PhysRevB.102.205304