Concurrence of anomalous Hall effect and charge density wave in a superconducting topological kagome metal

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Concurrence of anomalous Hall effect and charge density wave in a superconducting topological kagome metal

F. H. Yu, T. Wu, Z. Y. Wang, B. Lei, W. Z. Zhuo, J. J. Ying, and X. H. Chen

Phys. Rev. B 104, L041103 – Published 8 July 2021

Abstract

As one of the most fundamental physical phenomena, the anomalous Hall effect (AHE) typically occurs in ferromagnetic materials but is not expected in the conventional superconductors. Here, we have observed a giant AHE in kagome superconductor $Cs V_{3} {Sb}_{5}$ with transition temperature ( $T_{c}$ ) of 2.7 K. The anomalous Hall conductivity reaches up to $2.1 \times 10^{4} Ω^{- 1} c m^{- 1}$ which is larger than those observed in most of the ferromagnetic metals. Strikingly, the emergence of AHE exactly follows the higher-temperature charge-density-wave (CDW) transition with $T_{CDW} \sim 94 K$ , indicating a strong correlation between the CDW state and AHE. Furthermore, AHE disappears when the CDW transition is completely suppressed at high pressure. The origin for AHE is attributed to enhanced skew scattering in the CDW state and large Berry curvature arising from the kagome lattice. These discoveries make $Cs V_{3} {Sb}_{5}$ as an ideal platform to study the interplay among nontrivial band topology, CDW, and unconventional superconductivity.

Received 22 February 2021
Accepted 22 June 2021

DOI:https://doi.org/10.1103/PhysRevB.104.L041103

Physics Subject Headings (PhySH)

Anomalous Hall effect Charge density waves Magnetoresistance Superconductivity

Kagome lattice

Resistivity measurements

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

F. H. Yu¹, T. Wu¹, Z. Y. Wang¹, B. Lei¹, W. Z. Zhuo¹, J. J. Ying ^1,*, and X. H. Chen ^1,2,3,†

¹Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
²CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei, Anhui 230026, China
³Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China

^*yingjj@ustc.edu.cn
^†chenxh@ustc.edu.cn

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Issue

Vol. 104, Iss. 4 — 15 July 2021

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Images

Figure 1
(a) Crystal structure of $Cs V_{3} {Sb}_{5}$ . The vanadium sublattice forms perfect kagome lattice. There are two distinct Sb sublattices. Sb1 atom is centered on each kagome hexagon and Sb2 sublattice creates an antimonene layer below and above each kagome layer. (b) X-ray diffraction pattern of $Cs V_{3} {Sb}_{5}$ single crystal with the corresponding Miller indices ( $00 L$ ) in parentheses. The inset shows photo of typical $Cs V_{3} {Sb}_{5}$ single crystals on a 1 mm grid paper. (c)–(e) Temperature dependence of resistivity, magnetization, and heat capacity of $Cs V_{3} {Sb}_{5}$ single crystal. Clear phase transition around 94 K was observed in all measurements, possibly related to the charge density wave. The insets represent the bulk superconductivity around 2.7 K in all the measurements.
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Figure 2
Magnetoresistance measured at various temperatures with magnetic field along $c$ axis (a) and in $a b$ plane (b), respectively. (c) Magnetoresistance after subtracting a monotonic background plotted as a function of $1 / (μ_{0} H)$ at various temperatures. The inset shows a polynomial fitting of a MR curve above 2 T. (d) Extracted fast Fourier transform frequency showing four principal frequencies. The inset shows the Lifshitz-Kosevich fit of the $F 1$ and $F 2$ orbits to extract the effective mass.
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Figure 3
(a),(b) Field dependence of Hall resistivity at various temperatures with magnetic field up to 14 T. The gray area represents the AHE in the low-field region. The inset shows the temperature dependence of Hall coefficient. The magnitude of $R_{H}$ reaches its maximum value around $T^{*}$ . (c),(d) Extracted $ρ_{x y}^{AHE}$ by subtracting the local linear ordinary Hall background at various temperatures. AHE spontaneously emerges below $T^{*}$ .
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Figure 4
(a) Temperature dependence of the resistivity curve for $Cs V_{3} {Sb}_{5}$ at 1.42 GPa. $T^{*}$ is suppressed to 33 K as determined from the derivative resistivity curve. The inset exhibits the superconducting transition at 1.42 GPa. (b) Hall resistivity at various temperatures under the pressure of 1.42 GPa. The AHE sudden appears below $T^{*}$ . (c) The extracted anomalous Hall conductivity at various temperatures. (d) The Hall resistivity at various temperatures with the pressure of 2.02 GPa. No AHE is observed since CDW is completely suppressed.
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Figure 5
(a) The $ρ_{x y}^{AHE}$ as a function of temperature for $Cs V_{3} {Sb}_{5}$ and $K_{1 - x} V_{3} {Sb}_{5}$ . The data of $K_{1 - x} V_{3} {Sb}_{5}$ is taken from Ref. [23]. (b) Scaling behavior of magnetoresistance at 14 T with $σ_{AHE}$ for $Cs V_{3} {Sb}_{5}$ . (c) $σ_{AHE}$ versus $σ_{xx}$ for a variety of materials comparing with $Cs V_{3} {Sb}_{5}$ spanning various regimes from localized hopping regime to the skew scattering regime. For $Cs V_{3} {Sb}_{5}, σ_{AHE}$ follows quadratic scaling with $σ_{xx}$ only at low temperature and locates at the same position with $K_{1 - x} V_{3} {Sb}_{5}$ .
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