The drift mobility and ratio of Hall to drift mobility are computed for the scattering of carriers by a hydrogenic neutral impurity. The scattering is treated using the almost exact values of the phase shifts for scattering of electrons by neutral hydrogen scaled for the effective mass and dielectric constant of the semiconductor.

• Received 2 December 1974

DOI:https://doi.org/10.1103/PhysRevB.11.5208