Radiation damage of RbMgF3

N. Koumvakalis and W. A. Sibley
Phys. Rev. B 13, 4509 – Published 15 May 1976
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Abstract

Radiation-induced defects in RbMgF3 have been studied by optical techniques. A tentative identification of the absorption and emission bands associated with these defects suggests the following optical bands occur when the defects designated below are present: (a) [X2] (Vk) centers—330-nm absorption and 428-nm emission, (b) F centers—295- and 325-nm absorption (depends on crystal orientation), (c) F3 centers—387-, 285-, and 230-nm absorption; 430-nm emission, and (d) F3 centers—300-nm absorption; and 330- and 490-nm emission. The temperature dependence of the production and annihilation of these defects is also investigated.

  • Received 16 December 1975

DOI:https://doi.org/10.1103/PhysRevB.13.4509

©1976 American Physical Society

Authors & Affiliations

N. Koumvakalis and W. A. Sibley

  • Physics Department, Oklahoma State University, Stilwater, Oklahoma 74074

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Issue

Vol. 13, Iss. 10 — 15 May 1976

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