Abstract
Raman scattering by magnetoplasma excitations in doped semiconductors for arbitrary experimental geometry is considered. A theory, based on the generalized Landau quasiparticle picture, is developed in order to obtain the scattering cross section. We consider an application to the case of a nondegenerate plasma in parabolicband semiconductors. The geometry-dependent mixing between the hybrid-plasma first cyclotron mode and the first Bernstein mode is studied. We also discuss field-dependent attenuation effects.
- Received 9 December 1975
DOI:https://doi.org/10.1103/PhysRevB.14.3532
©1976 American Physical Society