Abstract
This paper deals with an electron-paramagnetic-resonance study of the center, which was first reported by Daly. The center is a secondary defect which forms upon annealing between 50 and 175°C in irradiated boron-doped silicon and is stable up to °C. Our studies indicate that the center exhibits only a high-temperature stress response which is indicative of a thermally activated atomic reorientation at °C. This defect does not exhibit a low-temperature stress response indicative of Jahn-Teller effects; consequently, the center has inherent symmetry by virtue of its molecular structure. The kinetics of this defect, the nature of the hyperfine interactions, and the symmetry of the defect suggest that the corresponds to either a Si di-interstitial or a Si split interstitial. The center appears to be similar but not identical to the center, which Lee and Corbett have recently suggested corresponds to a Si di-interstitial.
- Received 16 September 1975
DOI:https://doi.org/10.1103/PhysRevB.14.872
©1976 American Physical Society