X-Ray Diffraction Measurements on Metallic and Semiconducting Hexagonal NiS

Jeffrey Trahan, R. G. Goodrich, and S. F. Watkins
Phys. Rev. B 2, 2859 – Published 15 October 1970
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Abstract

The crystallographic structure of hexagonal NiS has been determined at temperatures above and below the metal-semiconducting transition. The powder x-ray diffraction peak intensities were used to determine the atom positions in both phases. The symmetry of the unit cell is found to change from P63mmc(D6h4) in the metallic phase to P63mc(C6v4) in the semiconducting phase.

  • Received 2 June 1970

DOI:https://doi.org/10.1103/PhysRevB.2.2859

©1970 American Physical Society

Authors & Affiliations

Jeffrey Trahan and R. G. Goodrich

  • Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803

S. F. Watkins

  • Coates Chemical Laboratory, Louisiana State University, Baton Rouge, Louisiana 70803

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Issue

Vol. 2, Iss. 8 — 15 October 1970

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