Temperature Coefficient of the Refractive Index of Diamond- and Zinc-Blende-Type Semiconductors

Peter Y. Yu and Manuel Cardona
Phys. Rev. B 2, 3193 – Published 15 October 1970
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Abstract

We have calculated the temperature coefficient of the long-wavelength refractive index of several group-IV and III-V semiconductors, using the Penn model for the electronic contribution to the dielectric constant. The isotropic band gap of this model is identified with the band gap at the X point of the Brillouin zone, which can be simply expressed in terms of pseudopotential coefficients. The explicit temperature dependence of this gap is calculated by applying to these pseudopotential coefficients the appropriate Debye-Waller factors. The thermal expansion effect is obtained in the manner suggested recently by Van Vechten. Good agreement between the calculated and the observed temperature dependence of the long-wavelength refractive index is found.

  • Received 11 May 1970

DOI:https://doi.org/10.1103/PhysRevB.2.3193

©1970 American Physical Society

Authors & Affiliations

Peter Y. Yu and Manuel Cardona

  • Brown University, Providence, Rhode Island
  • Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany

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Issue

Vol. 2, Iss. 8 — 15 October 1970

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