Ground-state properties of crystalline silicon in a density-functional pseudopotential approach

Alex Zunger
Phys. Rev. B 21, 4785 – Published 15 May 1980
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Abstract

A first-principles nonlocal pseudopotential approach is shown for the first time to predict accurately the ground-state bulk properties of a semiconductor. The calculated equilibrium lattice constant, total valence energy, and bulk modulus of Si are within 0.2%, 0.5%, and 5%, respectively, of the observed values.

  • Received 7 August 1979

DOI:https://doi.org/10.1103/PhysRevB.21.4785

©1980 American Physical Society

Authors & Affiliations

Alex Zunger

  • Solar Energy Research Institute, Golden, Colorado 80401

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Issue

Vol. 21, Iss. 10 — 15 May 1980

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