Site effect on the impurity levels in 4H, 6H, and 15R SiC

M. Ikeda, H. Matsunami, and T. Tanaka
Phys. Rev. B 22, 2842 – Published 15 September 1980
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Abstract

The existence of site-dependent impurity levels caused by inequivalent sites in 4H, 6H, and 15R SiC has been verified from a study of configuration coordinate phonons. From analyses of donor-acceptor pair and free-to-acceptor luminescence, two kinds of impurity levels of A1, Ga, and B acceptors and N donors substituted cubic-like and hexagonal-like sites are determined. All the impurities in cubic-like sites take deeper levels than those in hexagonal-like sites. Ratios of the ionization energies are approximately constant independent of polytypes and the kind of impurities, 1.0-1.08 for acceptors and 1.55-1.88 for donors, in spite of a wide range of the ionization energies. The origin of the site effect on the impurity level is explained by assuming the existence of a local dielectric constant and a local effective mass. Haynes' rule is found to apply relatively well to N donors in different sites in various polytypes SiC.

  • Received 31 December 1979

DOI:https://doi.org/10.1103/PhysRevB.22.2842

©1980 American Physical Society

Authors & Affiliations

M. Ikeda, H. Matsunami, and T. Tanaka*

  • Department of Electronics, Faculty of Engineering, Kyoto University, Kyoto 606, Japan

  • *Present address: Takuma College of Electro-Communications, Takuma 769-11, Kagawa, Japan.

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Issue

Vol. 22, Iss. 6 — 15 September 1980

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