Energy-dependent electron-energy-loss spectroscopy: Application to the surface and bulk electronic structure of MgO

Victor E. Henrich, G. Dresselhaus, and H. J. Zeiger
Phys. Rev. B 22, 4764 – Published 15 November 1980
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Abstract

The various effects that can occur when the primary electron energy, Ep, is varied in a reflection-energy-loss experiment are considered. For Ep100 eV, the dominant effect is an increase of the electron mean free path with increasing Ep. By performing energy-loss measurements with 100 eVEp2000 eV, it is possible to unambiguously separate bulk and surface features in loss spectra. That technique has been applied to the MgO (100) surface, and both Mg intraionic and O-to-Mg interionic transitions have been studied. The former transitions are found to agree well with the excited-state spectra of free Mg2+ ions, while the latter agree more closely with itinerant-electron calculations of MgO. Intrinsic surface-state transitions are seen in both Mg2+ and O-to-Mg spectra. The Mg core-level surface-state spectra can be explained by Stark splitting of the surface Mg2+ levels in the intense electric fields at the crystal surface. The surface-state structure seen in O-to-Mg loss spectra agrees with discrete variational Xα calculations of the MgO (100) surface and disagrees with linear combination of atomic orbitals calculations of the same surface. A low-energy-loss peak, possibly associated with surface defects, is seen on some surfaces; the exact nature of the surface defects involved is not yet clear.

  • Received 23 May 1980

DOI:https://doi.org/10.1103/PhysRevB.22.4764

©1980 American Physical Society

Authors & Affiliations

Victor E. Henrich*, G. Dresselhaus, and H. J. Zeiger

  • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173

  • *Present address: Department of Engineering and Applied Science, Yale University, New Haven, Connecticut 06520.
  • Present address: Francis Bitter National Magnet Laboratory, MIT, Cambridge, Massachusetts 02139.

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Vol. 22, Iss. 10 — 15 November 1980

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