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Picosecond transient photocurrents in amorphous silicon

A. M. Johnson, D. H. Auston, P. R. Smith, J. C. Bean, J. P. Harbison, and A. C. Adams
Phys. Rev. B 23, 6816(R) – Published 15 June 1981
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Abstract

Three different types of aSi, prepared by rf glow discharge, chemical vapor deposition, and evaporation, were found to have the same initial mobility of 1 cm2/V s at room temperature and different carrier relaxation times ranging from 200 to 4 ps. The initial mobility of aSi:H is thermally activated with a prefactor of 8 cm2/V s. These results give strong support to the existence of a mode of conduction in extended states which is an intrinsic property of aSi.

  • Received 2 March 1981

DOI:https://doi.org/10.1103/PhysRevB.23.6816

©1981 American Physical Society

Authors & Affiliations

A. M. Johnson*, D. H. Auston, P. R. Smith, J. C. Bean, J. P. Harbison, and A. C. Adams

  • Bell Laboratories, Murray Hill, New Jersey 07974

  • *Also at Phys. Dept., City College, City Univ. of New York, New York, N. Y. 10031. Present address: Bell Laboratories, Holmdel, N.J. 07733.

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Vol. 23, Iss. 12 — 15 June 1981

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