Four-wave mixing and phase conjugation near the band edge

A. Elçi and D. Rogovin
Phys. Rev. B 24, 5796 – Published 15 November 1981
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Abstract

We discuss degenerate four-wave mixing and phase conjugation near the band edge of direct-gap semiconductors and show that the reflectivity for conjugate waves is enhanced in the vicinity of the band edge. We also compare the quantum-mechanical results with the classical Drude model.

  • Received 22 December 1980

DOI:https://doi.org/10.1103/PhysRevB.24.5796

©1981 American Physical Society

Authors & Affiliations

A. Elçi

  • Max-Planck-Institut für Quantenoptik, D-8046 Garching, Munich, Federal Republic of Germany

D. Rogovin

  • Science Applications, Inc., 1200 Prospect Street, La Jolla, California 92038

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Issue

Vol. 24, Iss. 10 — 15 November 1981

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