Abstract
We have observed fluorescence line narrowing in the LO-phonon-assisted intrinsic exciton emission of , selectively excited over a range of energies below a critical energy , on the low-energy side of the exciton absorption line. The sharp emission lines disappear rather abruptly as the exciting energy increases through or as the temperature is raised above 10 K. We argue that this sharp line emission arises from excitons localized, on the time scale of the radiative lifetime (about 1 nsec), by alloy fluctuations. Its abrupt disappearance may be evidence for an effective mobility edge. A sideband on each of the sharp LO-phonon-assisted emission lines is also observed. The shape of this sideband can be accounted for by a model of spectral diffusion by acousticphonon-assisted tunneling between localized states.
- Received 4 November 1981
DOI:https://doi.org/10.1103/PhysRevB.25.3828
©1982 American Physical Society