Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductor CdSxSe1x

E. Cohen and M. D. Sturge
Phys. Rev. B 25, 3828 – Published 15 March 1982; Erratum Phys. Rev. B 26, 4730 (1982)
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Abstract

We have observed fluorescence line narrowing in the LO-phonon-assisted intrinsic exciton emission of CdSxSe1x, selectively excited over a range of energies below a critical energy Eem, on the low-energy side of the exciton absorption line. The sharp emission lines disappear rather abruptly as the exciting energy increases through Eem or as the temperature is raised above 10 K. We argue that this sharp line emission arises from excitons localized, on the time scale of the radiative lifetime (about 1 nsec), by alloy fluctuations. Its abrupt disappearance may be evidence for an effective mobility edge. A sideband on each of the sharp LO-phonon-assisted emission lines is also observed. The shape of this sideband can be accounted for by a model of spectral diffusion by acousticphonon-assisted tunneling between localized states.

  • Received 4 November 1981

DOI:https://doi.org/10.1103/PhysRevB.25.3828

©1982 American Physical Society

Erratum

Authors & Affiliations

E. Cohen* and M. D. Sturge

  • Bell Laboratories, Murray Hill, New Jersey 07974

  • *Permanent address: Physics Department and Solid State Institute, Technion, Haifa, Israel.

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Vol. 25, Iss. 6 — 15 March 1982

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