A calculation of electron mobility in heavily doped compensated polar semiconductors is presented including lattice scattering as well as scattering from point-impurity charges and from the hitherto neglected dipoles formed by the donor-acceptor pairs. Comparison with experimental data for GaAs doped heavily with Si gives evidence that the consideration of dipoles is essential in accounting for the electron transport.

• Received 5 January 1982

DOI:https://doi.org/10.1103/PhysRevB.25.6538