Exciton-plasma Mott transition in Si

George B. Norris and K. K. Bajaj
Phys. Rev. B 26, 6706 – Published 15 December 1982
PDFExport Citation

Abstract

The transition between free excitons and an electron-hole plasma is described for the first time by a theory based on full random-phase-approximation (RPA) screening in the plasma. The onset of exciton binding predicted is in excellent agreement with experimental data attributed to exciton dissociation in Si. It is suggested that the many-body electron-hole interaction may be well described by static RPA screening near the Mott transition.

  • Received 10 June 1982

DOI:https://doi.org/10.1103/PhysRevB.26.6706

©1982 American Physical Society

Authors & Affiliations

George B. Norris and K. K. Bajaj*

  • Air Force Wright Aeronautical Laboratories, AFWAL/AADR, Wright-Patterson Air Force Base, Ohio 45433

  • *Present address: University Research Center, Wright State University, Dayton, Ohio 45435.

References (Subscription Required)

Click to Expand
Issue

Vol. 26, Iss. 12 — 15 December 1982

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×