Anharmonic effects in light scattering due to optical phonons in silicon

M. Balkanski, R. F. Wallis, and E. Haro
Phys. Rev. B 28, 1928 – Published 15 August 1983
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Abstract

Systematic measurements by light scattering of the linewidth and frequency shift of the q=0 optical phonon in silicon over the temperature range of 5-1400 K are presented. Both the linewidth and frequency shift exhibit a quadratic dependence on temperature at high temperatures. This indicates the necessity of including terms in the phonon proper self-energy corresponding to four-phonon anharmonic processes.

  • Received 13 July 1982

DOI:https://doi.org/10.1103/PhysRevB.28.1928

©1983 American Physical Society

Authors & Affiliations

M. Balkanski, R. F. Wallis*, and E. Haro

  • Laboratoire de Physique des Solides, associé au Centre National de la Recherche Scientifique, Université Pierre et Marie Curie, Tour 13, Deuxième Etage, 4 Place Jussieu, F-75230 Paris Cedex 05, France

  • *Permanent address: Department of Physics, University of California, Irvine, Irvine, California 92717.

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Vol. 28, Iss. 4 — 15 August 1983

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