Electronic structure of BaPb1xBixO3

L. F. Mattheiss and D. R. Hamann
Phys. Rev. B 28, 4227 – Published 15 October 1983
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Abstract

Electronic-structure calculations have been carried out for representative members of the BaPb1xBixO3 alloy series with the use of the self-consistent, scalar-relativistic, linear augmented plane-wave (LAPW) method and the virtual-crystal approximation. The study includes LAPW calculations for the high-temperature cubic (x=0,0.3, 1) as well as the room-temperature tetragonal (x=0.3) and monoclinic (x=1) phases. The cubic results exhibit nearly-rigid-band—like behavior and feature a ten-band O(2p)[Pb(6s),Bi(6s)] complex near EF containing a pair of broad (∼16 eV) σ-bonding 2p6s subbands that are approximately centered on nonbonding O 2p states. 6s2p band overlap and metallic properties are predicted for all x in the cubic phase. The principal features of the cubic band structure survive the tetragonal distortion, predicting a nearly spherical Fermi surface and a low density of states at EF in the concentration range 0.05x0.30 where high-temperature superconductivity (Tc13 K) is observed. A strong Fermi-surface instability is shown to occur in the terminal (x=1) BaBiO3 compound, explaining both the stability of the monoclinic phase as well as its semiconducting properties.

  • Received 13 April 1983

DOI:https://doi.org/10.1103/PhysRevB.28.4227

©1983 American Physical Society

Authors & Affiliations

L. F. Mattheiss and D. R. Hamann

  • Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 28, Iss. 8 — 15 October 1983

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