Luminescence processes at chromium in GaAs

B. Deveaud, G. Picoli, B. Lambert, and G. Martinez
Phys. Rev. B 29, 5749 – Published 15 May 1984; Erratum Phys. Rev. B 31, 1153 (1985)
PDFExport Citation

Abstract

In GaAs:Cr, the Cr2+ internal luminescence is not observed when excited with above-gap light, because the E5 state of Cr2+ is above the conduction-band minimum. We report here on experiments which allow one to observe this luminescence: luminescence in Gax1AlxAs:Cr, luminescence in GaAs under hydrostatic pressure, or luminescence in GaAs excited with a yttrium-aluminum-garnet:neodymium laser at 1.32 μm (0.9 eV). The zero-phonon line of that luminescence is observed for the first time and corresponds well to the absorption line. It is shown that in any case the radiative transitions are the results of a balance between the internal transition (A) and the band-to-level transition (B). Photoluminescence excitation spectra of the various luminescence bands involving Cr2+ are reported, and they allow one to confirm the previously proposed schemes. A model is developed, in terms of one-electron orbitals, to explain the characteristics of the photoluminescence excitation processes for Cr2+ as well as for other transition-metal ions in III-V materials. Internal luminescence at Cr2+ is shown to be mainly excited through the capture of electronhole pairs by Cr2+ centers. This model allows one to propose some kind of Auger effect to explain the Cr2+-related photoconductivity in III-V compounds. Finally, various band-shape calculations are performed that lead to the conclusion that spin-orbit effects on the band shape are negligible and that the main effect is due to a quadratic Jahn-Teller effect in the E5 excited state.

  • Received 29 September 1983

DOI:https://doi.org/10.1103/PhysRevB.29.5749

©1984 American Physical Society

Erratum

Erratum: Luminescence processes at chromium in GaAs

B. Deveaud, G. Picoli, B. Lambert, and G. Martinez
Phys. Rev. B 31, 1153 (1985)

Authors & Affiliations

B. Deveaud, G. Picoli, and B. Lambert

  • Centre National d'Etudes des Télécommunications, LAB/ICM-22301 Lannion Cedex, France

G. Martinez

  • Service National des Champs Intenses, CNRS, LP 5201, 25 Avenue des Martyrs, 38042 Grenoble Cedex, France

References (Subscription Required)

Click to Expand
Issue

Vol. 29, Iss. 10 — 15 May 1984

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×