de Haas—van Alphen Effect in n InSb

R. J. Sladek, E. R. Gertner, and D. G. Seiler
Phys. Rev. B 3, 2608 – Published 15 April 1971
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Abstract

Measurements of de Haas-van Alphen torque oscillations have been made at 1.2 K on single-crystal n-type InSb samples containing between 6.6×1017 and 4.5×1018 electrons/cm3. The amplitude of the oscillations is found to depend on the crystallographic orientation and magnitude of the magnetic field. The anisotropy is accounted for by the warping of the conduction band and the damping by collision and inhomogeneity broadening. From the anisotropy of the period of the highest-concentration sample, we obtain LMN=(8.9±0.7)22m0.

  • Received 11 June 1970

DOI:https://doi.org/10.1103/PhysRevB.3.2608

©1971 American Physical Society

Authors & Affiliations

R. J. Sladek*,†

  • Department of Physics, Purdue University, Lafayette, Indiana 47907

E. R. Gertner

  • Science Center, North American Rockwell Corporation, Thousand Oaks, California 91360

D. G. Seiler

  • Department of Physics, North Texas State University, Denton, Texas 76203

  • *Visiting Scientist at Science Center, North American Rockwell Corporation, Thousand Oaks, Calif.
  • At Purdue partial support provided by the Advanced Research Projects Agency Interdisciplinary Laboratory Program.

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Vol. 3, Iss. 8 — 15 April 1971

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