Oxidation of GaAs(110): New results and models

G. Landgren; R. Ludeke; J. F. Morar; Y. Jugnet; F. J. Himpsel

doi:10.1103/PhysRevB.30.4839

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Oxidation of GaAs(110): New results and models

G. Landgren, R. Ludeke, J. F. Morar, Y. Jugnet, and F. J. Himpsel

Phys. Rev. B 30, 4839(R) – Published 15 October 1984

Abstract

The oxidation of ultra high-vacuum-cleaved GaAs(110) surfaces has been studied with high-resolution, core-level photoemission excited with synchrotron radiation. The oxidation is spatially and chemically inhomogeneous, and both subsurface oxidation and multibonding geometries occur already at submonolayer coverages.

Received 1 August 1984

DOI:https://doi.org/10.1103/PhysRevB.30.4839

Authors & Affiliations

G. Landgren^*, R. Ludeke, J. F. Morar, Y. Jugnet^†, and F. J. Himpsel

IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598

^*Permanent address: Institute of Microwave Technology, S-100 44 Stockholm, Sweden.
^†Permanent address: Institute de Recherches sur la Catalyse, Centre National de la Recherche Scientifique, 2 Avenue Einstein, F-69626 Villeurbanne Cedex, France.

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Vol. 30, Iss. 8 — 15 October 1984

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Physical Review B

covering condensed matter and materials physics