The electron mobility of ${\mathrm{Al}}_{0.48}$${\mathrm{In}}_{0.52}$As at room temperature is calculated over the concentration range 5×${10}^{15}$ to 2×${10}^{17}$ ${\mathrm{cm}}^{\mathrm{-}3}$. Polar optic, alloy, deformation-potential acoustic, piezoelectric, and ionized impurity scatterings, coupled with the electron-electron interaction, are incorporated. The degeneracy of the electron distribution and screening of the scattering processes are included. The Boltzmann equation is solved by a numerical iterative technique. The calculated results fit the experimental values at low carrier concentrations with a suitable choice of the alloy scattering potential. The experimental values at high carrier concentrations are less than the theoretical values even for a compensation ratio of 4, indicating that the samples are quite imperfect.

• Received 13 August 1984

DOI:https://doi.org/10.1103/PhysRevB.31.2524