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Spectroscopy of excited states in In0.53Ga0.47As-InP single quantum wells grown by chemical-beam epitaxy

R. Sauer, T. D. Harris, and W. T. Tsang
Phys. Rev. B 34, 9023(R) – Published 15 December 1986
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Abstract

Photoluminescence excitation (PLE) spectra are reported for six single quantum wells with thicknesses between 130 and 23 Å grown on the same wafer by chemical-beam epitaxy. The very strong, narrow line emission from these high-quality quantum wells enabled us to perform PLE with a lamp-monochromator combination as the excitation source. All of the observed excitonic absorption peaks are assigned. Good fits to the spectra can be made with band offsets of Qe60% and Qh40% and masses me*=0.041m0, mhh*=0.465m0, and mlh*=0.085m0. Energy-dependent corrections for me* due to conduction-band nonparabolicities are essential for these fits and yield γe=3.3×1015 cm2 for the γek4 correction term in the energy dispersion.

  • Received 10 September 1986

DOI:https://doi.org/10.1103/PhysRevB.34.9023

©1986 American Physical Society

Authors & Affiliations

R. Sauer and T. D. Harris

  • AT & T Bell Laboratories, Murray Hill, New Jersey 07974

W. T. Tsang

  • AT & T Bell Laboratories, Holmdel, New Jersey 07733

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Vol. 34, Iss. 12 — 15 December 1986

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