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Heterojunction valence-band-discontinuity dependence on face orientation

Alfonso Muoz, José Sánchez-Dehesa, and Fernando Flores
Phys. Rev. B 35, 6468(R) – Published 15 April 1987
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Abstract

Band offsets for the (100), (110), (111), and (1¯ 1¯ 1¯) orientation of the GaAs-AlAs and CdTe-HgTe heterojunctions have been investigated by use of a self-consistent tight-binding method. Our results show an important face dependence for the band offsets of the CdTe-HgTe heterojunction (≊0.20 eV), although differences for the GaAs-AlAs interface are negligible. We conclude that for high-ionicity semiconductors there is a slight dependence of the charge neutrality level on the face orientation.

  • Received 13 November 1986

DOI:https://doi.org/10.1103/PhysRevB.35.6468

©1987 American Physical Society

Authors & Affiliations

Alfonso Muoz, José Sánchez-Dehesa, and Fernando Flores

  • Departamento de Fisica de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain

Comments & Replies

Reply to ‘‘Comment on ‘Heterojunction valence-band-discontinuity dependence on face orientation’ ’’

Alfonso Muoz, Jose Sánchez-Dehesa, and Fernando Flores
Phys. Rev. B 37, 4803 (1988)

Comment on ‘‘Heterojunction valence-band-discontinuity dependence on face orientation’’

Chris G. Van de Walle and Richard M. Martin
Phys. Rev. B 37, 4801 (1988)

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Issue

Vol. 35, Iss. 12 — 15 April 1987

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