Quasichemical approximation in binary alloys

A. Sher, Mark van Schilfgaarde, An-Ban Chen, and William Chen
Phys. Rev. B 36, 4279 – Published 15 September 1987
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Abstract

In this theoretical study, the quasichemical approximation for an A1xBx alloy is formulated for an arbitrary lattice and choice of cluster. The statistical problem of the average number of each class of clusters is collapsed into a polynomial equation. An n-atom cluster of type j is characterized by an excess energy ɛj, the number of B atoms nj(B) and a degeneracy gj. If ɛj is a linear function of nj(B) and gj is a binomial coefficient of n and nj(B), then the cluster populations are random. Strains due to lattice-size mismatches, chemical (electron-ion interaction) differences, and differences between the electron-electron Coulomb interactions of the alloy constituents drive nonlinear variations of ɛj on nj(B). The gj is modified by coherent, externally applied stresses and temperature gradients present during crystal growth. We derive the conditions under which compounds are formed or spinodal decomposition occurs. We also discuss the possibility of materials consisting of arrays of two kinds of domains: one a random alloy and the other an ordered compound. The theory is specialized to semiconductor alloys A1xBxC in a distorted zinc-blende structure; numerical results are presented for Ga1xInxAs and GaAs1xSbx alloys. A major conclusion is that semiconductor alloys are almost never truly random.

  • Received 10 March 1987

DOI:https://doi.org/10.1103/PhysRevB.36.4279

©1987 American Physical Society

Authors & Affiliations

A. Sher and Mark van Schilfgaarde

  • SRI International, Menlo Park, California 94025

An-Ban Chen and William Chen

  • Department of Physics, Auburn University, Alabama 36849

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Issue

Vol. 36, Iss. 8 — 15 September 1987

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